MOSFET N-CH 30V 60A 8SOP
Type | Description |
---|---|
Series: | U-MOSVIII-H |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 1.4mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: | 46 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4400 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 1.6W (Ta), 64W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP Advance (5x5) |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI7464DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 200V 1.8A PPAK SO-8 |
|
FDP7030BLSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 60A TO220-3 |
|
IPS65R1K5CEAKMA1Rochester Electronics |
MOSFET N-CH 650V 3.1A TO251 |
|
IRFR5410TRPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 13A DPAK |
|
SI2302DS,215Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
PSMN6R0-30YLB,115Nexperia |
MOSFET N-CH 30V 71A LFPAK56 |
|
FDP52N20Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 52A TO220-3 |
|
IPB80N04S3-04Rochester Electronics |
MOSFET N-CH 40V 80A TO263-3 |
|
FCH041N60FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 76A TO247-3 |
|
DMG2301LK-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 2.4A SOT23 |
|
SI8413DB-T1-E1Vishay / Siliconix |
MOSFET P-CH 20V 4.8A 4MICROFOOT |
|
AUIRFR120ZRochester Electronics |
MOSFET N-CH 100V 8.7A DPAK |
|
IPW60R280C6FKSA1Rochester Electronics |
PFET, 13.8A I(D), 600V, 0.28OHM, |