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IPS65R1K5CEAKMA1

IPS65R1K5CEAKMA1

MOSFET N-CH 650V 3.1A TO251

IPS65R1K5CEAKMA1

IPS65R1K5CEAKMA1

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Part No :

IPS65R1K5CEAKMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 3.1A TO251
Catalog
Transistors - FETs, MOSFETs - Single
Availability
133813 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 10 - Jan 14 2025
PDF
IPS65R1K5CEAKMA1 PDF
Type Description
Series:CoolMOS™ CE
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 100 V
FET Feature:-
Power Dissipation (Max):28W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251
Package / Case:TO-251-3 Stub Leads, IPak
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