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IPP086N10N3G

IPP086N10N3G

POWER FIELD-EFFECT TRANSISTOR, 8

IPP086N10N3G

IPP086N10N3G

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Part No :

IPP086N10N3G

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
713671 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2024
Type Description
Series:*
Package:Bulk
Part Status:Active
FET Type:-
Technology:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:-
Supplier Device Package:-
Package / Case:-
IPP086N10N3G is available at GangBo-ic.com, Please review product page below for detailed information, including IPP086N10N3G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP086N10N3G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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