MOSFET P-CH 12V 6A SOT23
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12 V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Rds On (Max) @ Id, Vgs: | 150mOhm @ 500mA, 1.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 2 nC @ 4.5 V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 1275 pF @ 6 V |
FET Feature: | - |
Power Dissipation (Max): | 350mW (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTTFS5826NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8A 8WDFN |
|
IRFS3207TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 170A D2PAK |
|
BUK95150-55A,127Rochester Electronics |
PFET, 13A I(D), 55V, 0.161OHM, 1 |
|
ZVN4206ASTZZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 600MA E-LINE |
|
FQPF4N90Rochester Electronics |
MOSFET N-CH 900V 2.5A TO220F |
|
PMZ950UPELYLNexperia |
MOSFET P-CH 20V 500MA DFN1006-3 |
|
IRLS3034TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 40V 240A D2PAK |
|
DMP1012UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 12.6A/20A 6UDFN |
|
IXFK64N60P3Wickmann / Littelfuse |
MOSFET N-CH 600V 64A TO264AA |
|
FDB8896-F085Rochester Electronics |
19A, 30V, 0.0068OHM, N-CHANNEL, |
|
IRF540ZLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 36A TO262 |
|
FDPF55N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 55A TO220F |
|
SI4090DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 19.7A 8SO |