MOSFET N-CH 60V 4.5A SOT89/PCP-1
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 117mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 6.7 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 310 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 3.5W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-89/PCP-1 |
Package / Case: | TO-243AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AOTF13N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 13A TO220-3F |
|
IRF640STRRPBFVishay / Siliconix |
MOSFET N-CH 200V 18A TO263 |
|
TN0104N3-G-P014Roving Networks / Microchip Technology |
MOSFET N-CH 40V 450MA TO92-3 |
|
STWA65N60DM6STMicroelectronics |
MOSFET N-CH 600V 38A TO247 |
|
2SJ583LSRochester Electronics |
P-CHANNEL POWER MOSFET |
|
FDG327NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 1.5A SC88 |
|
NVMTS0D6N04CTXGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 533A 8DFNW |
|
AUIRF1018EIR (Infineon Technologies) |
MOSFET N-CH 60V 79A TO220AB |
|
SI2333-TPMicro Commercial Components (MCC) |
MOSFET P-CH 12V 6A SOT23 |
|
NTTFS5826NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8A 8WDFN |
|
IRFS3207TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 170A D2PAK |
|
BUK95150-55A,127Rochester Electronics |
PFET, 13A I(D), 55V, 0.161OHM, 1 |
|
ZVN4206ASTZZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 600MA E-LINE |