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IPP086N10N3G

IPP086N10N3G

POWER FIELD-EFFECT TRANSISTOR, 8

DI100N10PQ

DI100N10PQ

MOSFET N-CH 100V 100A 8QFN

DI100N10PQ

DI100N10PQ

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Part No :

DI100N10PQ

Manufacturer
Diotec Semiconductor
Description
MOSFET N-CH 100V 100A 8QFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
723672 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3400 pF @ 30 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-QFN (5x6)
Package / Case:8-PowerTDFN
DI100N10PQ is available at GangBo-ic.com, Please review product page below for detailed information, including DI100N10PQ price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for DI100N10PQ to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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