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SI4143DY-T1-GE3

SI4143DY-T1-GE3

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Part No :

SI4143DY-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CHANNEL 30V 25.3A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
18977 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 02 - Dec 06 2024
PDF
SI4143DY-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:25.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.2mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:167 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:6630 pF @ 15 V
FET Feature:-
Power Dissipation (Max):6W (Tc)
Operating Temperature:-55°C ~ 150°C (TA)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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