RES 210K OHM 1/10W 1% AXIAL
MOSFET N-CH 30V 5.3A 6UDFN
RF SHIELD 2.25" X 4" T/H
Type | Description |
---|---|
Series: | µCool™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 13mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 11 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 620 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 650mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-UDFN (1.6x1.6) |
Package / Case: | 6-PowerUFDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFB3207ZGPBFRochester Electronics |
MOSFET N-CH 75V 120A TO220AB |
|
SIHF540STRL-GE3Vishay / Siliconix |
MOSFET N-CH 100V 28A D2PAK |
|
STD3NK50Z-1STMicroelectronics |
MOSFET N-CH 500V 2.3A IPAK |
|
R6035ENZ1C9ROHM Semiconductor |
MOSFET N-CH 600V 35A TO247 |
|
SQJA72EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 100V 37A PPAK SO-8 |
|
SIHG17N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 15A TO247AC |
|
IXFP30N25X3Wickmann / Littelfuse |
MOSFET N-CHANNEL 250V 30A TO220 |
|
AOB288LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 80V 10.5A/46A TO263 |
|
IPL65R650C6SATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 6.7A THIN-PAK |
|
IPB60R145CFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 18A TO263-3-2 |
|
TSM070NB04LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 15A/75A 8PDFN |
|
DMNH4006SPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 110A PWRDI5060-8 |
|
NTMS4917NR2GRochester Electronics |
MOSFET N-CH 30V 7.1A 8SOIC |