MOSFET N-CH 30V 43A/100A 8PQFN
IC REG LINEAR 3.3V 250MA SOT223
Type | Description |
---|---|
Series: | HEXFET®, StrongIRFET™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 43A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 1.1mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 179 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7736 pF @ 24 V |
FET Feature: | - |
Power Dissipation (Max): | 3.7W (Ta), 156W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-PQFN (5x6) |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPD60R520CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDD2670Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 3.6A TO252 |
|
ZXMP10A17GQTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 2.4A SOT223 |
|
IPB180N04S4LH0ATMA1Rochester Electronics |
MOSFET N-CH 40V 180A TO263-7-3 |
|
RSR020P05FRATLROHM Semiconductor |
MOSFET P-CH 45V 2A TSMT3 |
|
APT56M60B2Roving Networks / Microchip Technology |
MOSFET N-CH 600V 60A TO247 |
|
IRFZ48NPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 64A TO220AB |
|
CSD18511Q5ATTexas Instruments |
MOSFET N-CH 40V 159A 8VSON |
|
DMT615MLFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V PWRDI3333 |
|
HUF76121S3SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI2333CDS-T1-E3Vishay / Siliconix |
MOSFET P-CH 12V 7.1A SOT23-3 |
|
FQPF18N20V2Rochester Electronics |
MOSFET N-CH 200V 18A TO220F |
|
FDP12N60NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 12A TO220-3 |