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IPB180N04S4LH0ATMA1

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IPB180N04S4LH0ATMA1

IPB180N04S4LH0ATMA1

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Part No :

IPB180N04S4LH0ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 40V 180A TO263-7-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10611 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
IPB180N04S4LH0ATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:310 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:24.44 pF @ 25 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-3
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
IPB180N04S4LH0ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB180N04S4LH0ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB180N04S4LH0ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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