MOSFET N-CH 55V 64A TO220AB
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 64A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 14mOhm @ 32A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 81 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1970 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 130W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CSD18511Q5ATTexas Instruments |
MOSFET N-CH 40V 159A 8VSON |
|
DMT615MLFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V PWRDI3333 |
|
HUF76121S3SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI2333CDS-T1-E3Vishay / Siliconix |
MOSFET P-CH 12V 7.1A SOT23-3 |
|
FQPF18N20V2Rochester Electronics |
MOSFET N-CH 200V 18A TO220F |
|
FDP12N60NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 12A TO220-3 |
|
AON6226Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 100V 48A 8DFN |
|
BUZ73ARochester Electronics |
MOSFET N-CH 200V 5.5A TO220-3 |
|
C3M0032120J1Wolfspeed - a Cree company |
1200V 32MOHM SIC MOSFET |
|
DMTH10H010LCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 108A TO220AB |
|
IRF6215STRLPBFIR (Infineon Technologies) |
MOSFET P-CH 150V 13A D2PAK |
|
SPW11N60S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFI4229PBFIR (Infineon Technologies) |
MOSFET N-CH 250V 19A TO220AB |