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FDD2670

FDD2670

MOSFET N-CH 200V 3.6A TO252

FDD2670

FDD2670

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Part No :

FDD2670

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 200V 3.6A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
24307500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
FDD2670 PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1228 pF @ 100 V
FET Feature:-
Power Dissipation (Max):3.2W (Ta), 70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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