SMALL SIGNAL FIELD-EFFECT TRANSI
Type | Description |
---|---|
Series: | TrenchMOS™ |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 75 V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 4Ohm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 1 nC @ 8 V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 40 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 700mW (Tc) |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BUK7506-75B,127Rochester Electronics |
PFET, 75A I(D), 75V, 0.0056OHM, |
|
AOTF600A70FLAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 8.5A TO220F |
|
RZR020P01TLROHM Semiconductor |
MOSFET P-CH 12V 2A TSMT3 |
|
FDMS0310SRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
FQI10N20CTURochester Electronics |
MOSFET N-CH 200V 9.5A I2PAK |
|
BUK6240-75C,118Rochester Electronics |
MOSFET N-CH 75V 22A DPAK |
|
SSM3J36TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 330MA UFM |
|
IRFH8303TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 43A/100A 8PQFN |
|
IPD60R520CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDD2670Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 3.6A TO252 |
|
ZXMP10A17GQTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 2.4A SOT223 |
|
IPB180N04S4LH0ATMA1Rochester Electronics |
MOSFET N-CH 40V 180A TO263-7-3 |
|
RSR020P05FRATLROHM Semiconductor |
MOSFET P-CH 45V 2A TSMT3 |