RES 200 OHM 1/4W .1% AXIAL
N-CHANNEL POWER MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
PMV50ENEARNexperia |
MOSFET N-CH 30V 3.9A TO236AB |
![]() |
BUK7Y28-75B,115Nexperia |
MOSFET N-CH 75V 35.5A LFPAK56 |
![]() |
IXTR170P10PWickmann / Littelfuse |
MOSFET P-CH 100V 108A ISOPLUS247 |
![]() |
ISL9N315AD3STRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
TSM2N100CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 1000V 1.85A TO251 |
![]() |
AOTF11S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO220-3F |
![]() |
IPP65R099C6XKSA1Rochester Electronics |
MOSFET N-CH 650V 38A TO220-3 |
![]() |
RM4N650IPRectron USA |
MOSFET N-CHANNEL 650V 4A TO251 |
![]() |
DMG1013UWQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 820MA SOT323 |
![]() |
FDP6035LRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
IRFBE30STRLPBFVishay / Siliconix |
MOSFET N-CH 800V 4.1A D2PAK |
![]() |
PSMN6R3-120ESQNexperia |
MOSFET N-CH 120V 70A I2PAK |
![]() |
IPD30N12S3L31ATMA1IR (Infineon Technologies) |
MOSFET N-CHANNEL_100+ |