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IPD30N12S3L31ATMA1

IPD30N12S3L31ATMA1

MOSFET N-CHANNEL_100+

IPD30N12S3L31ATMA1

IPD30N12S3L31ATMA1

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Part No :

IPD30N12S3L31ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CHANNEL_100+
Catalog
Transistors - FETs, MOSFETs - Single
Availability
322832 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IPD30N12S3L31ATMA1 PDF
Type Description
Series:*
Package:Tape & Reel (TR)
Part Status:Active
FET Type:-
Technology:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:-
Supplier Device Package:-
Package / Case:-
IPD30N12S3L31ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD30N12S3L31ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD30N12S3L31ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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  • IPD30N12S3L31ATMA1 Price
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