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RT1206BRC07226RL

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RES SMD 226 OHM 0.1% 1/4W 1206

IPP65R099C6XKSA1

IPP65R099C6XKSA1

MOSFET N-CH 650V 38A TO220-3

IPP65R099C6XKSA1

IPP65R099C6XKSA1

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Part No :

IPP65R099C6XKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 38A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IPP65R099C6XKSA1 PDF
Type Description
Series:CoolMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 12.8A, 10V
Vgs(th) (Max) @ Id:3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2.78 pF @ 100 V
FET Feature:-
Power Dissipation (Max):278W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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