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RM4N650IP

RM4N650IP

MOSFET N-CHANNEL 650V 4A TO251

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RM4N650IP

RM4N650IP

Image is for reference, please contact us to get the real picture

Part No :

RM4N650IP

Manufacturer
Rectron USA
Description
MOSFET N-CHANNEL 650V 4A TO251
Catalog
Transistors - FETs, MOSFETs - Single
Availability
272827 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 06 - Nov 10 2025
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 50 V
FET Feature:-
Power Dissipation (Max):46W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251
Package / Case:TO-251-3 Stub Leads, IPak
RM4N650IP is available at GangBo-ic.com, Please review product page below for detailed information, including RM4N650IP price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM4N650IP to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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