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IPB120N04S4L02ATMA1

IPB120N04S4L02ATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPB120N04S4L02ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 40V 120A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IPB120N04S4L02ATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:14.56 pF @ 25 V
FET Feature:-
Power Dissipation (Max):158W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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