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IPD78CN10NGATMA1

IPD78CN10NGATMA1

MOSFET N-CH 100V 13A TO252-3

IDSD-20-D-36.00-G

IDSD-20-D-36.00-G

INSULATION DISPLACEMENT TERMINAL

IPD78CN10NGATMA1

IPD78CN10NGATMA1

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Part No :

IPD78CN10NGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 13A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10968 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 02 - Dec 06 2024
PDF
IPD78CN10NGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:78mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:716 pF @ 50 V
FET Feature:-
Power Dissipation (Max):31W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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