N-CHANNEL POWER MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFP21N60LPBFVishay / Siliconix |
MOSFET N-CH 600V 21A TO247-3 |
|
SSM3J35AMFV,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 250MA VESM |
|
IRF231Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT40M70JVRRoving Networks / Microchip Technology |
MOSFET N-CH 400V 53A SOT227 |
|
SIS412DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK1212-8 |
|
AO4292EAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 8A 8SOIC |
|
IMBG120R030M1HXTMA1IR (Infineon Technologies) |
TRANS SJT N-CH 1.2KV 56A TO263 |
|
IPB120N06S402ATMA1Rochester Electronics |
MOSFET N-CH 60V 120A TO263-3 |
|
TSM60NB099PW C1GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 38A TO247 |
|
IXTA16N50PWickmann / Littelfuse |
MOSFET N-CH 500V 16A TO263 |
|
IXTP8N70X2MWickmann / Littelfuse |
MOSFET N-CH 700V 4A TO220 |
|
AON7508Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 26A/32A 8DFN |
|
STP20NM60STMicroelectronics |
MOSFET N-CH 600V 20A TO220AB |