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SSM3J35AMFV,L3F

SSM3J35AMFV,L3F

MOSFET P-CH 20V 250MA VESM

RNCF2010DTE4R42

RNCF2010DTE4R42

RES 4.42 OHM 0.5% 1/4W 2010

358P270B4I3T

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XTAL OSC VCXO 27.0000MHZ LVPECL

AFS4-10701170-10-10P-4

AFS4-10701170-10-10P-4

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SSM3J35AMFV,L3F

SSM3J35AMFV,L3F

Image is for reference, please contact us to get the real picture

Part No :

SSM3J35AMFV,L3F

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET P-CH 20V 250MA VESM
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14676 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 02 - Dec 06 2024
PDF
SSM3J35AMFV,L3F PDF
Type Description
Series:U-MOSVII
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:42 pF @ 10 V
FET Feature:-
Power Dissipation (Max):150mW (Ta)
Operating Temperature:150°C
Mounting Type:Surface Mount
Supplier Device Package:VESM
Package / Case:SOT-723
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