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TSM60NB099PW C1G

TSM60NB099PW C1G

MOSFET N-CHANNEL 600V 38A TO247

TSM60NB099PW C1G

TSM60NB099PW C1G

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Part No :

TSM60NB099PW C1G

Manufacturer
TSC (Taiwan Semiconductor)
Description
MOSFET N-CHANNEL 600V 38A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
642264 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
TSM60NB099PW C1G PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 11.7A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2587 pF @ 100 V
FET Feature:-
Power Dissipation (Max):329W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-3
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