MOSFET N-CH 40V 56A DPAK
Type | Description |
---|---|
Series: | HEXFET®, StrongIRFET™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 3.9mOhm @ 56A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 130 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3150 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 98W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SQD40P10-40L_GE3Vishay / Siliconix |
MOSFET P-CH 100V 38A TO252AA |
|
IPA60R280P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 12A TO220 |
|
IPD78CN10NGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 13A TO252-3 |
|
ZVN2106ASTZZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 450MA E-LINE |
|
IRF6621TRPBFRochester Electronics |
30V SINGLE N-CHANNEL HEXFET |
|
BSP324L6327Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFP21N60LPBFVishay / Siliconix |
MOSFET N-CH 600V 21A TO247-3 |
|
SSM3J35AMFV,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 250MA VESM |
|
IRF231Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT40M70JVRRoving Networks / Microchip Technology |
MOSFET N-CH 400V 53A SOT227 |
|
SIS412DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK1212-8 |
|
AO4292EAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 8A 8SOIC |
|
IMBG120R030M1HXTMA1IR (Infineon Technologies) |
TRANS SJT N-CH 1.2KV 56A TO263 |