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SIRA10BDP-T1-GE3

SIRA10BDP-T1-GE3

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SIRA10BDP-T1-GE3

SIRA10BDP-T1-GE3

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Part No :

SIRA10BDP-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 30A/60A PPAK SO8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12985 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
PDF
SIRA10BDP-T1-GE3 PDF
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36.2 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:1710 pF @ 15 V
FET Feature:-
Power Dissipation (Max):5W (Ta), 43W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
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