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SQS405ENW-T1_GE3

SQS405ENW-T1_GE3

MOSFET P-CH 12V 16A PPAK1212-8

SQS405ENW-T1_GE3

SQS405ENW-T1_GE3

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Part No :

SQS405ENW-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 12V 16A PPAK1212-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11219 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
PDF
SQS405ENW-T1_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:20mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:75 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:2650 pF @ 6 V
FET Feature:-
Power Dissipation (Max):39W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
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