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SQ2361ES-T1_GE3

SQ2361ES-T1_GE3

MOSFET P-CH 60V 2.8A SSOT23

SQ2361ES-T1_GE3

SQ2361ES-T1_GE3

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Part No :

SQ2361ES-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 60V 2.8A SSOT23
Catalog
Transistors - FETs, MOSFETs - Single
Availability
114278 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
PDF
SQ2361ES-T1_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:177mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:-
Package / Case:TO-236-3, SC-59, SOT-23-3
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