MOSFET N-CH 55V 35A D2PAK
Type | Description |
---|---|
Series: | UltraFET™ |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 34mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 44 nC @ 20 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 680 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 93W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AON6510Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 28A/32A 8DFN |
|
RM110N82T2Rectron USA |
MOSFET N-CH 82V 110A TO220-3 |
|
SI2323CDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 6A SOT23-3 |
|
IPW65R110CFDFKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 31.2A TO247-3 |
|
IRFR2405TRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 56A DPAK |
|
SQ2361ES-T1_GE3Vishay / Siliconix |
MOSFET P-CH 60V 2.8A SSOT23 |
|
SI7155DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 31A/100A PPAK |
|
SQS405ENW-T1_GE3Vishay / Siliconix |
MOSFET P-CH 12V 16A PPAK1212-8 |
|
IPP076N12N3GRochester Electronics |
IPP076N12 - 12V-300V N-CHANNEL P |
|
SSM3K357R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 650MA SOT23F |
|
FQU5N60CTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 2.8A IPAK |
|
IPP60R099CPAAKSA1Rochester Electronics |
MOSFET N-CH 600V 31A TO220-3 |
|
IXFH20N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 20A TO247AD |