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BSC010NE2LSATMA1

BSC010NE2LSATMA1

MOSFET N-CH 25V 39A/100A TDSON

BSC010NE2LSATMA1

BSC010NE2LSATMA1

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Part No :

BSC010NE2LSATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 39A/100A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10427 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
BSC010NE2LSATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:39A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4700 pF @ 12 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
BSC010NE2LSATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSC010NE2LSATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSC010NE2LSATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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