MOSFET N-CH 60V 195A D2PAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.5mOhm @ 170A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 300 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 8970 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 375W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDZ375PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.7A 4WLCSP |
|
NTDV20N06T4GRochester Electronics |
MOSFET N-CH 60V 20A DPAK |
|
STW56N60M2STMicroelectronics |
MOSFET N-CH 600V 52A TO247 |
|
IRFR9024TRLPBFVishay / Siliconix |
MOSFET P-CH 60V 8.8A DPAK |
|
IRFBC40PBF-BE3Vishay / Siliconix |
MOSFET N-CH 600V 6.2A TO220AB |
|
IXTR102N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 54A ISOPLUS247 |
|
SQ2364EES-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 2A SOT23-3 |
|
IMZ120R030M1HXKSA1IR (Infineon Technologies) |
SICFET N-CH 1.2KV 56A TO247-4 |
|
DMTH3004LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 21A/75A TO252 |
|
SQJ886EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
STN1NK60ZSTMicroelectronics |
MOSFET N-CH 600V 300MA SOT223 |
|
MIC94030YM4Rochester Electronics |
TINYFET P-CHANNEL MOSFET |
|
2N7002K-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 300MA TO236 |