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STW56N60M2

STW56N60M2

MOSFET N-CH 600V 52A TO247

STW56N60M2

STW56N60M2

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Part No :

STW56N60M2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 52A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14236 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
STW56N60M2 PDF
Type Description
Series:MDmesh™ M2
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:55mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3750 pF @ 100 V
FET Feature:-
Power Dissipation (Max):350W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-3
STW56N60M2 is available at GangBo-ic.com, Please review product page below for detailed information, including STW56N60M2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STW56N60M2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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