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IPU60R1K5CEAKMA2

IPU60R1K5CEAKMA2

MOSFET N-CH 600V 3.1A TO251-3

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IPU60R1K5CEAKMA2

IPU60R1K5CEAKMA2

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Part No :

IPU60R1K5CEAKMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 3.1A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
410341 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IPU60R1K5CEAKMA2 PDF
Type Description
Series:CoolMOS™ CE
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 100 V
FET Feature:-
Power Dissipation (Max):49W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
IPU60R1K5CEAKMA2 is available at GangBo-ic.com, Please review product page below for detailed information, including IPU60R1K5CEAKMA2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPU60R1K5CEAKMA2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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