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STH150N10F7-2

STH150N10F7-2

MOSFET N-CH 100V 110A H2PAK-2

STH150N10F7-2

STH150N10F7-2

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Part No :

STH150N10F7-2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 100V 110A H2PAK-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10300 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
STH150N10F7-2 PDF
Type Description
Series:DeepGATE™, STripFET™ VII
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.9mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8115 pF @ 50 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2Pak-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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