MOSFET N-CH 55V 46A LFPAK56
Type | Description |
---|---|
Series: | TrenchMOS™ |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 46A |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 17.3mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 18 nC @ 5 V |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 1.992 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | Surface Mount |
Supplier Device Package: | LFPAK56, Power-SO8 |
Package / Case: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPD90P03P404ATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 90A TO252-3 |
|
SI4864DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 17A 8SO |
|
IRFS830BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFPG40PBFVishay / Siliconix |
MOSFET N-CH 1000V 4.3A TO247-3 |
|
SIB417EDK-T1-GE3Vishay / Siliconix |
MOSFET P-CH 8V 9A PPAK SC75-6 |
|
SI2319DDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 2.7A/3.6A SOT23 |
|
STW40N60M2STMicroelectronics |
MOSFET N-CH 600V 34A TO247 |
|
IPSA70R600CEAKMA1Rochester Electronics |
MOSFET N-CH 700V 10.5A TO251-3 |
|
PSMN3R0-60PS,127Nexperia |
MOSFET N-CH 60V 100A TO220AB |
|
NTD32N06-1GRochester Electronics |
MOSFET N-CH 60V 32A IPAK |
|
IAUS165N08S5N029ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 165A HSOG-8 |
|
AUIRF3710ZSIR (Infineon Technologies) |
MOSFET N-CH 100V 59A D2PAK |
|
DMN2041L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 6.4A SOT23-3 |