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SIB417EDK-T1-GE3

SIB417EDK-T1-GE3

MOSFET P-CH 8V 9A PPAK SC75-6

SIB417EDK-T1-GE3

SIB417EDK-T1-GE3

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Part No :

SIB417EDK-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 8V 9A PPAK SC75-6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
080308 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
SIB417EDK-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):8 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:58mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 5 V
Vgs (Max):±5V
Input Capacitance (Ciss) (Max) @ Vds:565 pF @ 4 V
FET Feature:-
Power Dissipation (Max):2.4W (Ta), 13W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SC-75-6L Single
Package / Case:PowerPAK® SC-75-6L
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