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NTD32N06-1G

NTD32N06-1G

MOSFET N-CH 60V 32A IPAK

NTD32N06-1G

NTD32N06-1G

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Part No :

NTD32N06-1G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 32A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13175 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
NTD32N06-1G PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:32A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:26mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.725 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.5W (Ta), 93.75W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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