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IRFS3207PBF

IRFS3207PBF

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IRFS3207PBF

IRFS3207PBF

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Part No :

IRFS3207PBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 75V 170A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
960296 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
IRFS3207PBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:170A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:260 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7.6 pF @ 50 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS3207PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFS3207PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFS3207PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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