MOSFET N-CH 60V 60A D2PAK
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 14mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 81 nC @ 10 V |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 3.22 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.4W (Ta), 150W (Tj) |
Operating Temperature: | - |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPA60R600C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 7.3A TO220-FP |
|
DMG2305UXQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.2A SOT23 |
|
IRFS3006TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 60V 240A D2PAK |
|
SSM6J801R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A 6TSOP |
|
2SJ128-AZRochester Electronics |
POWER MOSFET |
|
STD7NS20T4STMicroelectronics |
MOSFET N-CH 200V 7A DPAK |
|
PMV20XNE215Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
AON7404GAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 20V 20A/20A 8DFN |
|
IPB60R199CPATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 16A TO263-3 |
|
SISS80DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 58.3A/210A PPAK |
|
IRFZ24NPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 17A TO220AB |
|
STL8N65M2STMicroelectronics |
MOSFET N-CH 650V 5A PWRFLAT56 HV |
|
CSD23201W10Rochester Electronics |
MOSFET P-CH 12V 2.2A 4DSBGA |