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NVB60N06T4G

NVB60N06T4G

MOSFET N-CH 60V 60A D2PAK

NVB60N06T4G

NVB60N06T4G

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Part No :

NVB60N06T4G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 60A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:14mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:81 nC @ 10 V
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:3.22 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.4W (Ta), 150W (Tj)
Operating Temperature:-
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NVB60N06T4G is available at GangBo-ic.com, Please review product page below for detailed information, including NVB60N06T4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NVB60N06T4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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