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IPB60R199CPATMA1

IPB60R199CPATMA1

MOSFET N-CH 650V 16A TO263-3

IPB60R199CPATMA1

IPB60R199CPATMA1

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Part No :

IPB60R199CPATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 16A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11784 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IPB60R199CPATMA1 PDF
Type Description
Series:CoolMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id:3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1520 pF @ 100 V
FET Feature:-
Power Dissipation (Max):139W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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