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SISS80DN-T1-GE3

SISS80DN-T1-GE3

MOSFET N-CH 20V 58.3A/210A PPAK

SISS80DN-T1-GE3

SISS80DN-T1-GE3

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Part No :

SISS80DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 58.3A/210A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16040 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:58.3A (Ta), 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:0.92mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:122 nC @ 10 V
Vgs (Max):+12V, -8V
Input Capacitance (Ciss) (Max) @ Vds:6450 pF @ 10 V
FET Feature:-
Power Dissipation (Max):5W (Ta), 65W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8S
Package / Case:PowerPAK® 1212-8S
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