MOSFET P-CH 12V 2.2A 4DSBGA
Type | Description |
---|---|
Series: | NexFET™ |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12 V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 82mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.4 nC @ 4.5 V |
Vgs (Max): | -6V |
Input Capacitance (Ciss) (Max) @ Vds: | 325 pF @ 6 V |
FET Feature: | - |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 4-DSBGA (1x1) |
Package / Case: | 4-UFBGA, DSBGA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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