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SI8800EDB-T2-E1

SI8800EDB-T2-E1

MOSFET N-CH 20V 4MICROFOOT

SI8800EDB-T2-E1

SI8800EDB-T2-E1

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Part No :

SI8800EDB-T2-E1

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 4MICROFOOT
Catalog
Transistors - FETs, MOSFETs - Single
Availability
115684 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2024
PDF
SI8800EDB-T2-E1 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:80mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.3 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-Microfoot
Package / Case:4-XFBGA, CSPBGA
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