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IMZ120R045M1XKSA1

IMZ120R045M1XKSA1

SICFET N-CH 1200V 52A TO247-4

IMZ120R045M1XKSA1

IMZ120R045M1XKSA1

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Part No :

IMZ120R045M1XKSA1

Manufacturer
IR (Infineon Technologies)
Description
SICFET N-CH 1200V 52A TO247-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10112 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:CoolSiC™
Package:Tray
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id:5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 15 V
Vgs (Max):+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 800 V
FET Feature:Current Sensing
Power Dissipation (Max):228W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-4-1
Package / Case:TO-247-4
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