MOSFET N-CH 20V 100A LFPAK56
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 2.7mOhm @ 25A, 4.5V |
Vgs(th) (Max) @ Id: | 950mV @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 78 nC @ 4.5 V |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 5.85 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | Surface Mount |
Supplier Device Package: | LFPAK56, Power-SO8 |
Package / Case: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VN3205N3-G-P002Roving Networks / Microchip Technology |
MOSFET N-CH 50V 1.2A TO92-3 |
|
NTTFS4C13NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.2A 8WDFN |
|
IPB60R299CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF624SPBFVishay / Siliconix |
MOSFET N-CH 250V 4.4A D2PAK |
|
NDD03N60Z-1GRochester Electronics |
MOSFET N-CH 600V 2.6A IPAK |
|
NTP5D0N15MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 15A/139A TO220 |
|
5HP01M-TL-E-FSRochester Electronics |
MOSFET P-CH 50V 0.07A MCP3 |
|
IXTT6N120Wickmann / Littelfuse |
MOSFET N-CH 1200V 6A TO268 |
|
NTJS4405NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 1A SC88/SC70-6 |
|
IMZ120R045M1XKSA1IR (Infineon Technologies) |
SICFET N-CH 1200V 52A TO247-4 |
|
CSD18534Q5ATTexas Instruments |
MOSFET N-CHANNEL 60V 50A 8VSON |
|
SN7002WH6433Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
RQ6E030ATTCRROHM Semiconductor |
MOSFET P-CH 30V 3A TSMT6 |