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IXTT6N120

IXTT6N120

MOSFET N-CH 1200V 6A TO268

MAR-7SM+

MAR-7SM+

SMT GAIN BLOCK, DC - 2000 MHZ, 5

IXTT6N120

IXTT6N120

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Part No :

IXTT6N120

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 1200V 6A TO268
Catalog
Transistors - FETs, MOSFETs - Single
Availability
296729 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
IXTT6N120 PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.6Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1950 pF @ 25 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-268
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXTT6N120 is available at GangBo-ic.com, Please review product page below for detailed information, including IXTT6N120 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXTT6N120 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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