MOSFET P-CH 30V 2.5A TO236
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, TrenchFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 170mOhm @ 1.8A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6.8 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 210 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1.9W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-236 (SOT-23) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPA60R450E6XKSA1Rochester Electronics |
PFET, 600V, 0.45OHM, 1-ELEMENT, |
|
ZVN4424ASTZZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 240V 260MA E-LINE |
|
SI8800EDB-T2-E1Vishay / Siliconix |
MOSFET N-CH 20V 4MICROFOOT |
|
PH2520U,115Rochester Electronics |
MOSFET N-CH 20V 100A LFPAK56 |
|
VN3205N3-G-P002Roving Networks / Microchip Technology |
MOSFET N-CH 50V 1.2A TO92-3 |
|
NTTFS4C13NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.2A 8WDFN |
|
IPB60R299CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF624SPBFVishay / Siliconix |
MOSFET N-CH 250V 4.4A D2PAK |
|
NDD03N60Z-1GRochester Electronics |
MOSFET N-CH 600V 2.6A IPAK |
|
NTP5D0N15MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 15A/139A TO220 |
|
5HP01M-TL-E-FSRochester Electronics |
MOSFET P-CH 50V 0.07A MCP3 |
|
IXTT6N120Wickmann / Littelfuse |
MOSFET N-CH 1200V 6A TO268 |
|
NTJS4405NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 1A SC88/SC70-6 |