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IAUC28N08S5L230ATMA1

IAUC28N08S5L230ATMA1

MOSFET N-CH 80V 28A 8TDSON-33

IAUC28N08S5L230ATMA1

IAUC28N08S5L230ATMA1

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Part No :

IAUC28N08S5L230ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 28A 8TDSON-33
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12742 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
Type Description
Series:Automotive, AEC-Q101, OptiMOS™-5
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:23mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs:15.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:867 pF @ 40 V
FET Feature:-
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-33
Package / Case:8-PowerTDFN
IAUC28N08S5L230ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IAUC28N08S5L230ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IAUC28N08S5L230ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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