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FQD1N60TM

FQD1N60TM

MOSFET N-CH 600V 1A DPAK

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FQD1N60TM

FQD1N60TM

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Part No :

FQD1N60TM

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 1A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19980 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
FQD1N60TM PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
FQD1N60TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQD1N60TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQD1N60TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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