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MOSFET N-CH 600V 120MA SOT223-4

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BSP135H6327XTSA1

BSP135H6327XTSA1

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Part No :

BSP135H6327XTSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 120MA SOT223-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
35722 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 04 - Nov 08 2024
PDF
BSP135H6327XTSA1 PDF
Type Description
Series:SIPMOS®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):0V, 10V
Rds On (Max) @ Id, Vgs:45Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id:1V @ 94µA
Gate Charge (Qg) (Max) @ Vgs:4.9 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:146 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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