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RF4E110BNTR

RF4E110BNTR

MOSFET N-CH 30V 11A HUML2020L8

CB1.37-2IPX-2IN

CB1.37-2IPX-2IN

CBL ASSY IPX MHF1 PLG-PLG 2"

RF4E110BNTR

RF4E110BNTR

Image is for reference, please contact us to get the real picture

Part No :

RF4E110BNTR

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 30V 11A HUML2020L8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12559 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
RF4E110BNTR PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11.1mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:HUML2020L8
Package / Case:8-PowerUDFN
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