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CSD25213W10

CSD25213W10

MOSFET P-CH 20V 1.6A 4DSBGA

CSD25213W10

CSD25213W10

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Part No :

CSD25213W10

Manufacturer
Texas Instruments
Description
MOSFET P-CH 20V 1.6A 4DSBGA
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17663 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
Type Description
Series:NexFET™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:47mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.9 nC @ 4.5 V
Vgs (Max):-6V
Input Capacitance (Ciss) (Max) @ Vds:478 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-DSBGA (1x1)
Package / Case:4-UFBGA, DSBGA
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